VS4603DM6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS4603DM6
   Código: 4603DM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 441 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 175 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 204 nC
   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 1245 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: TO263-6L

Búsqueda de reemplazo de MOSFET VS4603DM6

VS4603DM6 Datasheet (PDF)

..1. Size:889K cn vgsemi
vs4603dm6.pdf

VS4603DM640V/175A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 175 A Fast Switching and High efficiency 100% Avalanche Tested,100% Rg TestedTO-263-6L Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching l

8.1. Size:997K cn vgsemi
vs4603gpmt.pdf

VS4603GPMT40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 1.8 m Very low on-resistanceI D(Silicon Limited) 160 A VitoMOS TechnologyI D(Package Limited) 100 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking P

8.2. Size:1188K cn vgsemi
vs4603gpht.pdf

VS4603GPHT40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeI D(Silicon Limited) 160 A Very low on-resistanceI D(Package Limited) 100 A VitoMOS Technology Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4603GPHT PDFN5x6 4603GP

9.1. Size:735K cn vanguard
vs4602ap.pdf

VS4602AP 40V/220A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.6 m N-Channel10V Logic Level Control I D 220 A Enhancement mode Advanced Package for Low RDS(on) and High Efficiency 100% Avalanche test PDFN5x6 Applicable to DC/DC and AC/DC converters Pb-free lead plating; RoHS compliant Tape and reel Part ID

9.2. Size:658K cn vanguard
vs4604ap.pdf

VS4604AP 40V/125A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 2.7 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 3.7 m Enhancement mode I D 125 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test PDFN5x6 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking

9.3. Size:990K cn vgsemi
vs4604ad.pdf

VS4604AD40V/140A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 3.8 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4

9.4. Size:1045K cn vgsemi
vs4604atd.pdf

VS4604ATD40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 3.7 m Enhancement modeI D 150 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4604ATD TO-263 4604

9.5. Size:1057K cn vgsemi
vs4604at.pdf

VS4604AT40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 3.7 m Enhancement modeI D 150 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4604AT TO-220AB 46

9.6. Size:987K cn vgsemi
vs4602ap.pdf

VS4602AP40V/220A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m N-Channel10V Logic Level ControlI D 220 A Enhancement mode Advanced Package for Low RDS(on) and High EfficiencyPDFN5x6 100% Avalanche test Applicable to DC/DC and AC/DC converters Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing

9.7. Size:1060K cn vgsemi
vs4604dt.pdf

VS4604DT40V/285A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 2.3 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 285 A 100% Avalanche TestedTO-220AB Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4604DT TO-220AB 4604DT 50pcs/TubeMaxim

9.8. Size:1059K cn vgsemi
vs4604dm.pdf

VS4604DM40V/290A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 2.2 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 290 A 100% Avalanche Tested Pb-free lead plating; RoHS compliantTO-263Part ID Package Type Marking PackingVS4604DM TO-263 4604DM 800pcs/ReelMaximum

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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