Справочник MOSFET. VS4603DM6

 

VS4603DM6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VS4603DM6
   Маркировка: 4603DM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 441 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 175 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 204 nC
   trⓘ - Время нарастания: 115 ns
   Cossⓘ - Выходная емкость: 1245 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: TO263-6L

 Аналог (замена) для VS4603DM6

 

 

VS4603DM6 Datasheet (PDF)

 ..1. Size:889K  cn vgsemi
 vs4603dm6.pdf

VS4603DM6 VS4603DM6

VS4603DM640V/175A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 175 A Fast Switching and High efficiency 100% Avalanche Tested,100% Rg TestedTO-263-6L Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching l

 8.1. Size:997K  cn vgsemi
 vs4603gpmt.pdf

VS4603DM6 VS4603DM6

VS4603GPMT40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 1.8 m Very low on-resistanceI D(Silicon Limited) 160 A VitoMOS TechnologyI D(Package Limited) 100 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking P

 8.2. Size:1188K  cn vgsemi
 vs4603gpht.pdf

VS4603DM6 VS4603DM6

VS4603GPHT40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeI D(Silicon Limited) 160 A Very low on-resistanceI D(Package Limited) 100 A VitoMOS Technology Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4603GPHT PDFN5x6 4603GP

 9.1. Size:735K  cn vanguard
 vs4602ap.pdf

VS4603DM6 VS4603DM6

VS4602AP 40V/220A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.6 m N-Channel10V Logic Level Control I D 220 A Enhancement mode Advanced Package for Low RDS(on) and High Efficiency 100% Avalanche test PDFN5x6 Applicable to DC/DC and AC/DC converters Pb-free lead plating; RoHS compliant Tape and reel Part ID

 9.2. Size:658K  cn vanguard
 vs4604ap.pdf

VS4603DM6 VS4603DM6

VS4604AP 40V/125A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 2.7 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 3.7 m Enhancement mode I D 125 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test PDFN5x6 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking

 9.3. Size:990K  cn vgsemi
 vs4604ad.pdf

VS4603DM6 VS4603DM6

VS4604AD40V/140A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 3.8 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4

 9.4. Size:1045K  cn vgsemi
 vs4604atd.pdf

VS4603DM6 VS4603DM6

VS4604ATD40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 3.7 m Enhancement modeI D 150 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4604ATD TO-263 4604

 9.5. Size:1057K  cn vgsemi
 vs4604at.pdf

VS4603DM6 VS4603DM6

VS4604AT40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 3.7 m Enhancement modeI D 150 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4604AT TO-220AB 46

 9.6. Size:987K  cn vgsemi
 vs4602ap.pdf

VS4603DM6 VS4603DM6

VS4602AP40V/220A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m N-Channel10V Logic Level ControlI D 220 A Enhancement mode Advanced Package for Low RDS(on) and High EfficiencyPDFN5x6 100% Avalanche test Applicable to DC/DC and AC/DC converters Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing

 9.7. Size:1060K  cn vgsemi
 vs4604dt.pdf

VS4603DM6 VS4603DM6

VS4604DT40V/285A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 2.3 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 285 A 100% Avalanche TestedTO-220AB Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS4604DT TO-220AB 4604DT 50pcs/TubeMaxim

 9.8. Size:1059K  cn vgsemi
 vs4604dm.pdf

VS4603DM6 VS4603DM6

VS4604DM40V/290A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 2.2 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 290 A 100% Avalanche Tested Pb-free lead plating; RoHS compliantTO-263Part ID Package Type Marking PackingVS4604DM TO-263 4604DM 800pcs/ReelMaximum

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