VS4622DE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS4622DE
   Código: 4622DE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: PDFN3333

Búsqueda de reemplazo de MOSFET VS4622DE

VS4622DE Datasheet (PDF)

..1. Size:879K cn vgsemi
vs4622de.pdf

VS4622DE40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 15 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 19 m Enhancement modeI D(Wire bond Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 DualPart ID Package Type Marking PackingVS4622DE PDFN3333 Dual 4622DE 5000pcs/ReelMaximum ratings, at T A=25 C, unless otherwis

9.1. Size:955K cn vgsemi
vs4620de-g.pdf

VS4620DE-G40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 12 m Enhancement modeI D(Silicon Limited) 47 A VitoMOS TechnologyI D(Package Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 Dual Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPa

9.2. Size:894K cn vgsemi
vs4620gd.pdf

VS4620GD40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesTO-252Part ID Package Type Marking PackingVS4620GD TO-252 4620

9.3. Size:962K cn vgsemi
vs4620dp-g.pdf

VS4620DP-G40V/36A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 10 m Enhancement modeI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A Fast Switching and High efficiencyPDFN5x6 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Packi

9.4. Size:1113K cn vgsemi
vs4620gs.pdf

VS4620GS40V/11A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 10 m VitoMOS TechnologyI D(Silicon Limited) 11 A Fast Switching and High efficiencySOP8 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4620GS SOP8 4620GS 3000pcs/ReelMaximum ratings, at T

9.5. Size:876K cn vgsemi
vs4620gi.pdf

VS4620GI40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg testedTO-251 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620GI TO-251 4620

9.6. Size:1011K cn vgsemi
vs4620gp.pdf

VS4620GP40V/40A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 6.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 10 m VitoMOS TechnologyI D(Silicon Limited) 40 A 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS4620GP PDFN5x6 4620GP 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specif

9.7. Size:1108K cn vgsemi
vs4620gemc.pdf

VS4620GEMC40V/36A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 10 m VitoMOS TechnologyI D(Silicon Limited) 54 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS4620GEMC PDFN3333 4620GE 5000PCS/Ree

9.8. Size:952K cn vgsemi
vs4620ds-g.pdf

VS4620DS-G40V/11A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 8.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 11 m VitoMOS TechnologyI D 11 A 100% Avalanche Tested,100% Rg TestedSOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620DS-G SOP8 4620DS 3000pcs/Reel

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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