VS4622DE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VS4622DE
Маркировка: 4622DE
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 22 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 20 nC
trⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 85 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: PDFN3333
VS4622DE Datasheet (PDF)
vs4622de.pdf
VS4622DE40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 15 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 19 m Enhancement modeI D(Wire bond Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 DualPart ID Package Type Marking PackingVS4622DE PDFN3333 Dual 4622DE 5000pcs/ReelMaximum ratings, at T A=25 C, unless otherwis
vs4620de-g.pdf
VS4620DE-G40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 12 m Enhancement modeI D(Silicon Limited) 47 A VitoMOS TechnologyI D(Package Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 Dual Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPa
vs4620gd.pdf
VS4620GD40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesTO-252Part ID Package Type Marking PackingVS4620GD TO-252 4620
vs4620dp-g.pdf
VS4620DP-G40V/36A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 10 m Enhancement modeI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A Fast Switching and High efficiencyPDFN5x6 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Packi
vs4620gs.pdf
VS4620GS40V/11A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 10 m VitoMOS TechnologyI D(Silicon Limited) 11 A Fast Switching and High efficiencySOP8 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4620GS SOP8 4620GS 3000pcs/ReelMaximum ratings, at T
vs4620gi.pdf
VS4620GI40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg testedTO-251 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620GI TO-251 4620
vs4620gp.pdf
VS4620GP40V/40A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 6.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 10 m VitoMOS TechnologyI D(Silicon Limited) 40 A 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS4620GP PDFN5x6 4620GP 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specif
vs4620gemc.pdf
VS4620GEMC40V/36A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 10 m VitoMOS TechnologyI D(Silicon Limited) 54 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS4620GEMC PDFN3333 4620GE 5000PCS/Ree
vs4620ds-g.pdf
VS4620DS-G40V/11A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 8.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 11 m VitoMOS TechnologyI D 11 A 100% Avalanche Tested,100% Rg TestedSOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620DS-G SOP8 4620DS 3000pcs/Reel
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918