VSD005N03MS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VSD005N03MS30V/105A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.4 m Enhancement modeI D 105 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSD005N03MS TO-252 005

VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 5.0 m N-Channel R DS(on),TYP@ VGS=4.5V 6.0 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat

VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET V DS 30 VFeatures R DS(on),TYP@ VGS=10 V 2.2 m N-Channel R DS(on),TYP@ VGS=4.5V 2.8 m Enhancement mode I D 150 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking infor

VSD003N04MS-G40V/58A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 58 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedTO-252 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart I

VSD007N04MS-G40V/90A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.6 m Enhancement modeR DS(on),TYP@ VGS=4.5V 5.3 m Very low on-resistance RDS(on)I D 90 A VitoMOS TechnologyTO-252 Fast Switching and High efficiency 100% Avalanche testPart ID Package Type Marking PackingVSD007N04MS-G TO-252 007N04M 2500PCS/ReelMax