VSD005N03MS Specs and Replacement

Type Designator: VSD005N03MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO252

VSD005N03MS substitution

- MOSFET ⓘ Cross-Reference Search

 

VSD005N03MS datasheet

 ..1. Size:1056K  cn vgsemi
 vsd005n03ms.pdf pdf_icon

VSD005N03MS

VSD005N03MS 30V/105A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 4.4 m Enhancement mode I D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSD005N03MS TO-252 005... See More ⇒

 9.1. Size:1027K  cn vanguard
 vsd007n06ms.pdf pdf_icon

VSD005N03MS

VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 5.0 m N-Channel R DS(on),TYP@ VGS=4.5V 6.0 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat... See More ⇒

 9.2. Size:284K  cn vanguard
 vsd004n03ms.pdf pdf_icon

VSD005N03MS

VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.2 m N-Channel R DS(on),TYP@ VGS=4.5V 2.8 m Enhancement mode I D 150 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking infor... See More ⇒

 9.3. Size:1017K  cn vgsemi
 vsd003n04ms-g.pdf pdf_icon

VSD005N03MS

VSD003N04MS-G 40V/58A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 58 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested TO-252 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part I... See More ⇒

SHOW MORE

Detailed specifications: VS4802GMM, VS4802GPHT, VS4802GPMT, VS6614DS, VS6614DS-K, VSA030C03LD, VSA030C03MD, VSD003N04MS-G, IRFZ24N, VSD007N04MS-G, VSD020C04MC, VSE002N03MS-G, VSE003N04MSC-G, VSE003N04MS-G, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G

Keywords - VSD005N03MS MOSFET specs

 VSD005N03MS cross reference

 VSD005N03MS equivalent finder

 VSD005N03MS pdf lookup

 VSD005N03MS substitution

 VSD005N03MS replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs