VSP002N03MS-G Todos los transistores

 

VSP002N03MS-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VSP002N03MS-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 1155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: PDFN5X6
     - Selección de transistores por parámetros

 

VSP002N03MS-G Datasheet (PDF)

 ..1. Size:1019K  cn vgsemi
vsp002n03ms-g.pdf pdf_icon

VSP002N03MS-G

VSP002N03MS-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.5 m Low on-resistance RDS(on) @ VGS=4.5 VI D 150 A VitoMOS TechnologyPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP002N03MS-G PDFN5x6 002N03M 30

 3.1. Size:1023K  cn vgsemi
vsp002n03ms.pdf pdf_icon

VSP002N03MS-G

VSP002N03MS30V/100A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.1 m Advanced Package for Low RDS(on) and High EfficiencyI D(Silicon Limited) 365 A High Current CapabilityI D(Package Limited) 100 A Enable Better Thermal DissipationPDFN5x6 100% Avalanche TestPart ID Package

 3.2. Size:1131K  cn vgsemi
vsp002n03mst-g.pdf pdf_icon

VSP002N03MS-G

VSP002N03MST-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.0 m Very low on-resistanceI D(Silicon Limited) 163 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche TestedPart ID Package Type Marking PackingVSP

 9.1. Size:779K  cn vanguard
vsp007n07ms.pdf pdf_icon

VSP002N03MS-G

VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

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