FDMS5352 Todos los transistores

 

FDMS5352 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS5352

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm

Encapsulados: POWER56

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FDMS5352 datasheet

 ..1. Size:243K  fairchild semi
fdms5352.pdf pdf_icon

FDMS5352

May 2009 FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3A been especially tailored to minimize the on-state resistance and Advanced Pa

 8.1. Size:475K  fairchild semi
fdms5362l f085.pdf pdf_icon

FDMS5352

December 2013 FDMS5362L_F085 N-Channel Power Trench MOSFET 60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current packa

 8.2. Size:508K  fairchild semi
fdms5361l f085.pdf pdf_icon

FDMS5352

 8.3. Size:497K  fairchild semi
fdms5360l f085.pdf pdf_icon

FDMS5352

January 2014 FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5m Features Typ rDS(on) = 6.5m at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current package d

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