FDMS5352 Specs and Replacement
Type Designator: FDMS5352
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 49 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: POWER56
FDMS5352 substitution
- MOSFET ⓘ Cross-Reference Search
FDMS5352 datasheet
fdms5352.pdf
May 2009 FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3A been especially tailored to minimize the on-state resistance and Advanced Pa... See More ⇒
fdms5362l f085.pdf
December 2013 FDMS5362L_F085 N-Channel Power Trench MOSFET 60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current packa... See More ⇒
fdms5360l f085.pdf
January 2014 FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5m Features Typ rDS(on) = 6.5m at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current package d... See More ⇒
Detailed specifications: FDMS3606AS, STM8405, FDMS3615S, FDMS3662, STM8401, FDMS3672, STM8362, FDMS4435BZ, 20N50, FDMS5672, FDMS6673BZ, FDMS6681Z, FDMS7556S, FDMS7558S, FDMS7560S, FDMS7570S, FDMS7572S
Keywords - FDMS5352 MOSFET specs
FDMS5352 cross reference
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History: AOL1206 | IRLS3813PBF
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