VSP003N04MST-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VSP003N04MST-G
   Código: 003N04M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 202 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 232 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
   Carga de la puerta (Qg): 44 nC
   Tiempo de subida (tr): 46 nS
   Conductancia de drenaje-sustrato (Cd): 855 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0023 Ohm
   Paquete / Cubierta: PDFN5X6

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VSP003N04MST-G Datasheet (PDF)

..1. Size:935K cn vgsemi
vsp003n04mst-g.pdf

VSP003N04MST-G40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.8 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.6 m Very low on-resistanceI D(Silicon Limited) 232 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marki

3.1. Size:1013K cn vgsemi
vsp003n04ms-g.pdf

VSP003N04MS-G40V/110A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.4 m Low on-resistance RDS(on) @ VGS=4.5 VI D 110 A VitoMOS TechnologyPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP003N04MS-G PDFN5x6 003N04M 30

5.1. Size:1099K cn vgsemi
vsp003n04hs-g.pdf

VSP003N04HS-G40V/33A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 2.6 m Enhancement modeI D(Silicon Limited) 78 A Very low on-resistanceI D(Package Limited) 33 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVSP003N04HS-G PDFN5x6 003N04H 3000pcs/ReelMaximum ratings, at T

9.1. Size:779K cn vanguard
vsp007n07ms.pdf

VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

9.2. Size:715K cn vanguard
vsp008n10msc.pdf

VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa

9.3. Size:327K cn vanguard
vsp007p06ms.pdf

VSP007P06MS -60V/-80A P-Channel Advanced Power MOSFET Features V DS -60 VR DS(on),TYP@ VGS=-10 V 8.0 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 10.0 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -80 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Ty

9.4. Size:1019K cn vgsemi
vsp002n03ms-g.pdf

VSP002N03MS-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.5 m Low on-resistance RDS(on) @ VGS=4.5 VI D 150 A VitoMOS TechnologyPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP002N03MS-G PDFN5x6 002N03M 30

9.5. Size:1238K cn vgsemi
vsp005n03ms.pdf

VSP005N03MS30V/105A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.1 m Enhancement modeI D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packin

9.6. Size:1023K cn vgsemi
vsp002n03ms.pdf

VSP002N03MS30V/100A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.1 m Advanced Package for Low RDS(on) and High EfficiencyI D(Silicon Limited) 365 A High Current CapabilityI D(Package Limited) 100 A Enable Better Thermal DissipationPDFN5x6 100% Avalanche TestPart ID Package

9.7. Size:978K cn vgsemi
vsp007n04ms-g.pdf

VSP007N04MS-G40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on)I D 80 A VitoMOS TechnologyPDFN5x6 100% Avalanche testTape and reelPart ID Package Type MarkinginformationVSP007N04MS-G PDFN5x6 007N04M 3000PCS/ReelMaximum ratings, at

9.8. Size:1443K cn vgsemi
vsp008c03md.pdf

VSP008C03MD30V N+P Channel Advanced Power MOSFETV DS 30 -30 VFeaturesR DS(on),TYP@ VGS=10 V 6.5 13 m N+P ChannelR DS(on),TYP@ VGS=4.5V 10 24 m Enhancement modeI D 45 -35 A Very low on-resistance Fast SwitchingPDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP008C03MD PDFN5x6 Dual 008C03MD 3000pcs/ReelMa

9.9. Size:1131K cn vgsemi
vsp002n03mst-g.pdf

VSP002N03MST-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.0 m Very low on-resistanceI D(Silicon Limited) 163 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche TestedPart ID Package Type Marking PackingVSP

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