VSP005N03MS Todos los transistores

 

VSP005N03MS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VSP005N03MS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: PDFN5X6
 

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VSP005N03MS Datasheet (PDF)

 ..1. Size:1238K  cn vgsemi
vsp005n03ms.pdf pdf_icon

VSP005N03MS

VSP005N03MS30V/105A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.1 m Enhancement modeI D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packin

 9.1. Size:779K  cn vanguard
vsp007n07ms.pdf pdf_icon

VSP005N03MS

VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

 9.2. Size:715K  cn vanguard
vsp008n10msc.pdf pdf_icon

VSP005N03MS

VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa

 9.3. Size:327K  cn vanguard
vsp007p06ms.pdf pdf_icon

VSP005N03MS

VSP007P06MS -60V/-80A P-Channel Advanced Power MOSFET Features V DS -60 VR DS(on),TYP@ VGS=-10 V 8.0 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 10.0 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -80 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Ty

Otros transistores... VSE2R5N03MS , VSO007N04MS-G , VSP002N03MS , VSP002N03MS-G , VSP002N03MST-G , VSP003N04HS-G , VSP003N04MS-G , VSP003N04MST-G , HY1906P , VSP007N04MS-G , VSP008C03MD , VSP040C04MD , VSP0R8N04HS-G , VSP1R1N04HS-G , VSP1R4N04HS-G , JCS740VC , JCS740RC .

History: AP4563AGH | VP2450N3

 

 
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