VSP005N03MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSP005N03MS
Marking Code: 005N03M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 105 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: PDFN5X6
VSP005N03MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSP005N03MS Datasheet (PDF)
vsp005n03ms.pdf
VSP005N03MS30V/105A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.1 m Enhancement modeI D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packin
vsp007n07ms.pdf
VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I
vsp008n10msc.pdf
VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa
vsp007p06ms.pdf
VSP007P06MS -60V/-80A P-Channel Advanced Power MOSFET Features V DS -60 VR DS(on),TYP@ VGS=-10 V 8.0 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 10.0 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -80 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Ty
vsp002n03ms-g.pdf
VSP002N03MS-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.5 m Low on-resistance RDS(on) @ VGS=4.5 VI D 150 A VitoMOS TechnologyPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP002N03MS-G PDFN5x6 002N03M 30
vsp003n04hs-g.pdf
VSP003N04HS-G40V/33A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 2.6 m Enhancement modeI D(Silicon Limited) 78 A Very low on-resistanceI D(Package Limited) 33 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVSP003N04HS-G PDFN5x6 003N04H 3000pcs/ReelMaximum ratings, at T
vsp003n04ms-g.pdf
VSP003N04MS-G40V/110A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 2.3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.4 m Low on-resistance RDS(on) @ VGS=4.5 VI D 110 A VitoMOS TechnologyPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP003N04MS-G PDFN5x6 003N04M 30
vsp002n03ms.pdf
VSP002N03MS30V/100A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.1 m Advanced Package for Low RDS(on) and High EfficiencyI D(Silicon Limited) 365 A High Current CapabilityI D(Package Limited) 100 A Enable Better Thermal DissipationPDFN5x6 100% Avalanche TestPart ID Package
vsp007n04ms-g.pdf
VSP007N04MS-G40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on)I D 80 A VitoMOS TechnologyPDFN5x6 100% Avalanche testTape and reelPart ID Package Type MarkinginformationVSP007N04MS-G PDFN5x6 007N04M 3000PCS/ReelMaximum ratings, at
vsp003n04mst-g.pdf
VSP003N04MST-G40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.8 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.6 m Very low on-resistanceI D(Silicon Limited) 232 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marki
vsp008c03md.pdf
VSP008C03MD30V N+P Channel Advanced Power MOSFETV DS 30 -30 VFeaturesR DS(on),TYP@ VGS=10 V 6.5 13 m N+P ChannelR DS(on),TYP@ VGS=4.5V 10 24 m Enhancement modeI D 45 -35 A Very low on-resistance Fast SwitchingPDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP008C03MD PDFN5x6 Dual 008C03MD 3000pcs/ReelMa
vsp002n03mst-g.pdf
VSP002N03MST-G30V/150A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.0 m Very low on-resistanceI D(Silicon Limited) 163 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche TestedPart ID Package Type Marking PackingVSP
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
LIST
Last Update
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD