VSP007N04MS-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VSP007N04MS-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 465 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Paquete / Cubierta: PDFN5X6
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Otros transistores... VSO007N04MS-G , VSP002N03MS , VSP002N03MS-G , VSP002N03MST-G , VSP003N04HS-G , VSP003N04MS-G , VSP003N04MST-G , VSP005N03MS , AO3407 , VSP008C03MD , VSP040C04MD , VSP0R8N04HS-G , VSP1R1N04HS-G , VSP1R4N04HS-G , JCS740VC , JCS740RC , JCS740SC .
History: AP9974GP | NCE65N230I | PHB20N06T | AOD476 | CJD01N65B
History: AP9974GP | NCE65N230I | PHB20N06T | AOD476 | CJD01N65B



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