VSP008C03MD Todos los transistores

 ..1. Size:1443K  cn vgsemi
 vsp008c03md.pdf

VSP008C03MD 30V N+P Channel Advanced Power MOSFET V DS 30 -30 V Features R DS(on),TYP@ VGS= 10 V 6.5 13 m N+P Channel R DS(on),TYP@ VGS= 4.5V 10 24 m Enhancement mode I D 45 -35 A Very low on-resistance Fast Switching PDFN5x6 Dual Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP008C03MD PDFN5x6 Dual 008C03MD 3000pcs/Reel Ma

 8.1. Size:715K  cn vanguard
 vsp008n10msc.pdf

VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa

 9.1. Size:779K  cn vanguard
 vsp007n07ms.pdf

VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

 9.2. Size:327K  cn vanguard
 vsp007p06ms.pdf

VSP007P06MS -60V/-80A P-Channel Advanced Power MOSFET Features V DS -60 V R DS(on),TYP@ VGS=-10 V 8.0 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 10.0 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -80 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Ty

 9.3. Size:1019K  cn vgsemi
 vsp002n03ms-g.pdf

VSP002N03MS-G 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 3.5 m Low on-resistance RDS(on) @ VGS=4.5 V I D 150 A VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP002N03MS-G PDFN5x6 002N03M 30

 9.4. Size:1238K  cn vgsemi
 vsp005n03ms.pdf

VSP005N03MS 30V/105A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.7 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 4.1 m Enhancement mode I D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packin

 9.5. Size:1099K  cn vgsemi
 vsp003n04hs-g.pdf

VSP003N04HS-G 40V/33A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 2.6 m Enhancement mode I D(Silicon Limited) 78 A Very low on-resistance I D(Package Limited) 33 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Part ID Package Type Marking Packing VSP003N04HS-G PDFN5x6 003N04H 3000pcs/Reel Maximum ratings, at T

 9.6. Size:1013K  cn vgsemi
 vsp003n04ms-g.pdf

VSP003N04MS-G 40V/110A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 2.3 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 3.4 m Low on-resistance RDS(on) @ VGS=4.5 V I D 110 A VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP003N04MS-G PDFN5x6 003N04M 30

 9.7. Size:1023K  cn vgsemi
 vsp002n03ms.pdf

VSP002N03MS 30V/100A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 0.8 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 1.1 m Advanced Package for Low RDS(on) and High Efficiency I D(Silicon Limited) 365 A High Current Capability I D(Package Limited) 100 A Enable Better Thermal Dissipation PDFN5x6 100% Avalanche Test Part ID Package

 9.8. Size:978K  cn vgsemi
 vsp007n04ms-g.pdf

VSP007N04MS-G 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on) I D 80 A VitoMOS Technology PDFN5x6 100% Avalanche test Tape and reel Part ID Package Type Marking information VSP007N04MS-G PDFN5x6 007N04M 3000PCS/Reel Maximum ratings, at

 9.9. Size:935K  cn vgsemi
 vsp003n04mst-g.pdf

VSP003N04MST-G 40V/150A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 1.8 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.6 m Very low on-resistance I D(Silicon Limited) 232 A VitoMOS Technology I D(Package Limited) 150 A Fast Switching and High efficiency PDFN5x6 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marki

 9.10. Size:1131K  cn vgsemi
 vsp002n03mst-g.pdf

VSP002N03MST-G 30V/150A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 1.3 m Enhancement mode R DS(on),TYP@ VGS=4.5V 2.0 m Very low on-resistance I D(Silicon Limited) 163 A VitoMOS Technology I D(Package Limited) 150 A Fast Switching and High efficiency PDFN5x6 100% Avalanche Tested Part ID Package Type Marking Packing VSP