VSP008C03MD MOSFET. Datasheet pdf. Equivalent
Type Designator: VSP008C03MD
Marking Code: 008C03MD
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 22 nC
Rise Time (tr): 4 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: PDFN5X6
VSP008C03MD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSP008C03MD Datasheet (PDF)
vsp008c03md.pdf
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vsp003n04hs-g.pdf
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vsp003n04mst-g.pdf
VSP003N04MST-G40V/150A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.8 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.6 m Very low on-resistanceI D(Silicon Limited) 232 A VitoMOS TechnologyI D(Package Limited) 150 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marki
vsp002n03mst-g.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
