FDMS5672 Todos los transistores

December 2007 FDMS5672 tm N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5m Features General Description Max rDS(on) = 11.5m at VGS = 10V, ID = 10.6A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 16.5m at VGS = 6V, ID = 8A Optimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg

May 2009 FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3A been especially tailored to minimize the on-state resistance and Advanced Pa

December 2013 FDMS5362L_F085 N-Channel Power Trench MOSFET 60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current packa

January 2014 FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5m Features Typ rDS(on) = 6.5m at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current package d