FDMS5672 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS5672
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 32 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: POWER56

Búsqueda de reemplazo de MOSFET FDMS5672

FDMS5672 Datasheet (PDF)

..1. Size:542K fairchild semi
fdms5672.pdf

December 2007FDMS5672tmN-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mFeatures General Description Max rDS(on) = 11.5m at VGS = 10V, ID = 10.6AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 16.5m at VGS = 6V, ID = 8AOptimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg

9.1. Size:243K fairchild semi
fdms5352.pdf

May 2009FDMS5352tmN-Channel Power Trench MOSFET 60V, 49A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3Abeen especially tailored to minimize the on-state resistance and Advanced Pa

9.2. Size:475K fairchild semi
fdms5362l f085.pdf

December 2013FDMS5362L_F085N-Channel Power Trench MOSFET60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternatorForcurrentpacka

9.3. Size:508K fairchild semi
fdms5361l f085.pdf

August 2014FDMS5361L_F085N-Channel PowerTrench MOSFET60 V, 35 A, 15 m Features Typ rDS(on) = 11.7 m at VGS = 10 V, ID = 16.5 A Typ Qg(tot) = 37 nC at VGS = 10 V, ID = 16.5 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurrent

9.4. Size:497K fairchild semi
fdms5360l f085.pdf

January 2014FDMS5360L_F085N-Channel Power Trench MOSFET60V, 60A, 8.5m Features Typ rDS(on) = 6.5m at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternatorForcurrentpackaged

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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