FDMS5672 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

December 2007FDMS5672tmN-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mFeatures General Description Max rDS(on) = 11.5m at VGS = 10V, ID = 10.6AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 16.5m at VGS = 6V, ID = 8AOptimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg

May 2009FDMS5352tmN-Channel Power Trench MOSFET 60V, 49A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3Abeen especially tailored to minimize the on-state resistance and Advanced Pa

December 2013FDMS5362L_F085N-Channel Power Trench MOSFET60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternatorForcurrentpacka

August 2014FDMS5361L_F085N-Channel PowerTrench MOSFET60 V, 35 A, 15 m Features Typ rDS(on) = 11.7 m at VGS = 10 V, ID = 16.5 A Typ Qg(tot) = 37 nC at VGS = 10 V, ID = 16.5 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurrent

January 2014FDMS5360L_F085N-Channel Power Trench MOSFET60V, 60A, 8.5m Features Typ rDS(on) = 6.5m at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternatorForcurrentpackaged