FDMS5672 MOSFET Datasheet: N-Ch, 60V, 22A. Full specification with pinout and replacement list

FDMS5672 Specs and Replacement

Type Designator: FDMS5672

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: POWER56

FDMS5672 substitution

- MOSFET ⓘ Cross-Reference Search

FDMS5672 datasheet

..1. Size:542K fairchild semi
fdms5672.pdf pdf_icon

December 2007 FDMS5672 tm N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5m Features General Description Max rDS(on) = 11.5m at VGS = 10V, ID = 10.6A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 16.5m at VGS = 6V, ID = 8A Optimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg... See More ⇒

9.1. Size:243K fairchild semi
fdms5352.pdf pdf_icon

May 2009 FDMS5352 tm N-Channel Power Trench MOSFET 60V, 49A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 8.2m at VGS = 4.5V, ID = 12.3A been especially tailored to minimize the on-state resistance and Advanced Pa... See More ⇒

9.2. Size:475K fairchild semi
fdms5362l f085.pdf pdf_icon

December 2013 FDMS5362L_F085 N-Channel Power Trench MOSFET 60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current packa... See More ⇒

9.3. Size:508K fairchild semi
fdms5361l f085.pdf pdf_icon