FDMS6673BZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2009FDMS6673BZP-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 mFeatures General DescriptionThe FDMS6673BZ has been designed to minimize losses in load Max rDS(on) = 6.8 m at VGS = -10 V, ID = -15.2 Aswitch applications. Advancements in both silicon and package Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -11.2 Atechnologies have been combined to offer the lowe

FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -122 A, 3.2 mFeaturesGeneral Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(on) and

May 2009FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -49 A, 3.2 mFeatures General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(

FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -122 A, 3.2 mFeaturesGeneral Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(on) and