FDMS6673BZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS6673BZ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 93 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: POWER56

Búsqueda de reemplazo de MOSFET FDMS6673BZ

FDMS6673BZ Datasheet (PDF)

..1. Size:614K 1
fdms6673bz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..2. Size:278K fairchild semi
fdms6673bz.pdf

August 2009FDMS6673BZP-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 mFeatures General DescriptionThe FDMS6673BZ has been designed to minimize losses in load Max rDS(on) = 6.8 m at VGS = -10 V, ID = -15.2 Aswitch applications. Advancements in both silicon and package Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -11.2 Atechnologies have been combined to offer the lowe

8.1. Size:338K 1
fdms6681z.pdf

FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -122 A, 3.2 mFeaturesGeneral Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(on) and

8.2. Size:239K fairchild semi
fdms6681z.pdf

May 2009FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -49 A, 3.2 mFeatures General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(

8.3. Size:338K onsemi
fdms6681z.pdf

Otros transistores... FDMS3615S , FDMS3662 , STM8401 , FDMS3672 , STM8362 , FDMS4435BZ , FDMS5352 , FDMS5672 , IRF530 , FDMS6681Z , FDMS7556S , FDMS7558S , FDMS7560S , FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 .

Liste

Recientemente añadidas las descripciónes de los transistores: