FDMS6673BZ MOSFET Datasheet: P-Ch, 30V, 28A. Full specification with pinout and replacement list

FDMS6673BZ Specs and Replacement

Type Designator: FDMS6673BZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: POWER56

FDMS6673BZ substitution

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FDMS6673BZ datasheet

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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August 2009 FDMS6673BZ P-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 m Features General Description The FDMS6673BZ has been designed to minimize losses in load Max rDS(on) = 6.8 m at VGS = -10 V, ID = -15.2 A switch applications. Advancements in both silicon and package Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -11.2 A technologies have been combined to offer the lowe... See More ⇒

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FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -122 A, 3.2 m Features General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 A technologies have been combined to offer the lowest rDS(on) and ... See More ⇒

8.2. Size:239K fairchild semi
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May 2009 FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -49 A, 3.2 m Features General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 A technologies have been combined to offer the lowest rDS(... See More ⇒