FDMS6673BZ Datasheet and Replacement. Cross Reference Search

FDMS6673BZ Datasheet (PDF)

..1. Size:614K 1
fdms6673bz.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..2. Size:278K fairchild semi
fdms6673bz.pdf pdf_icon

August 2009FDMS6673BZP-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 mFeatures General DescriptionThe FDMS6673BZ has been designed to minimize losses in load Max rDS(on) = 6.8 m at VGS = -10 V, ID = -15.2 Aswitch applications. Advancements in both silicon and package Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -11.2 Atechnologies have been combined to offer the lowe

8.1. Size:338K 1
fdms6681z.pdf pdf_icon

FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -122 A, 3.2 mFeaturesGeneral Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(on) and

8.2. Size:239K fairchild semi
fdms6681z.pdf pdf_icon

May 2009FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -49 A, 3.2 mFeatures General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(