FDMS6681Z Todos los transistores

FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -122 A, 3.2 m Features General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 A technologies have been combined to offer the lowest rDS(on) and

May 2009 FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -49 A, 3.2 m Features General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 A technologies have been combined to offer the lowest rDS(

FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -122 A, 3.2 m Features General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 A technologies have been combined to offer the lowest rDS(on) and

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2009 FDMS6673BZ P-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 m Features General Description The FDMS6673BZ has been designed to minimize losses in load Max rDS(on) = 6.8 m at VGS = -10 V, ID = -15.2 A switch applications. Advancements in both silicon and package Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -11.2 A technologies have been combined to offer the lowe