FDMS6681Z MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS6681Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 49 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 172 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: POWER56
FDMS6681Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS6681Z Datasheet (PDF)
fdms6681z.pdf
FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -122 A, 3.2 mFeaturesGeneral Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(on) and
fdms6681z.pdf
May 2009FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -49 A, 3.2 mFeatures General Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(
fdms6681z.pdf
FDMS6681ZP-Channel PowerTrench MOSFET-30 V, -122 A, 3.2 mFeaturesGeneral Description Max rDS(on) = 3.2 m at VGS = -10 V, ID = -21.1 AThe FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package Max rDS(on) = 5.0 m at VGS = -4.5 V, ID = -15.7 Atechnologies have been combined to offer the lowest rDS(on) and
fdms6673bz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms6673bz.pdf
August 2009FDMS6673BZP-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 mFeatures General DescriptionThe FDMS6673BZ has been designed to minimize losses in load Max rDS(on) = 6.8 m at VGS = -10 V, ID = -15.2 Aswitch applications. Advancements in both silicon and package Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -11.2 Atechnologies have been combined to offer the lowe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFJ32N50Q
History: IXFJ32N50Q
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