ME2301A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME2301A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 3.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.9 V
Carga de la puerta (Qg): 9.3 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 65 pF
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET ME2301A
ME2301A Datasheet (PDF)
me2301a me2301a-g.pdf
ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m@VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m@VGS=-1.8V minimize on-stat
me2301 me2301-g.pdf
ME2301/ME2301-G P-Channel Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es
me2301dc me2301dc-g.pdf
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m@VGS=-4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 150m@VGS=-2.5Vtrench technology. This high density process is especially tailored to Super high density cell design
me2301gc me2301gc-g.pdf
ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m@VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m@VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=-1.8V trench technology. This high density process is especially tailored to Sup
me2301dn me2301dn-g.pdf
ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m@VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig
me2301s me2301s-g.pdf
ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
