ME2301A Specs and Replacement

Type Designator: ME2301A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT23

ME2301A substitution

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ME2301A datasheet

 ..1. Size:1077K  matsuki electric
 me2301a me2301a-g.pdf pdf_icon

ME2301A

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat... See More ⇒

 8.1. Size:1127K  matsuki electric
 me2301 me2301-g.pdf pdf_icon

ME2301A

ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es... See More ⇒

 8.2. Size:1999K  matsuki electric
 me2301dc me2301dc-g.pdf pdf_icon

ME2301A

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design ... See More ⇒

 8.3. Size:1321K  matsuki electric
 me2301gc me2301gc-g.pdf pdf_icon

ME2301A

ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m @VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m @VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=-1.8V trench technology. This high density process is especially tailored to Sup... See More ⇒

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Detailed specifications: ME15N25, ME15N25F, ME15N25F-G, ME15N25-G, ME200N04T, ME200N04T-G, ME20N10-G, ME20N15F, IRFP250N, ME2301A-G, ME2301DC, ME2301DC-G, ME2301DN, ME2301DN-G, ME2301GC, ME2301GC-G, ME2301S

Keywords - ME2301A MOSFET specs

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