All MOSFET. ME2301A Datasheet

 

ME2301A Datasheet and Replacement


   Type Designator: ME2301A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT23
 

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ME2301A Datasheet (PDF)

 ..1. Size:1077K  matsuki electric
 me2301a me2301a-g.pdf pdf_icon

ME2301A

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m@VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m@VGS=-1.8V minimize on-stat

 8.1. Size:1127K  matsuki electric
 me2301 me2301-g.pdf pdf_icon

ME2301A

ME2301/ME2301-G P-Channel Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es

 8.2. Size:1999K  matsuki electric
 me2301dc me2301dc-g.pdf pdf_icon

ME2301A

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m@VGS=-4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 150m@VGS=-2.5Vtrench technology. This high density process is especially tailored to Super high density cell design

 8.3. Size:1321K  matsuki electric
 me2301gc me2301gc-g.pdf pdf_icon

ME2301A

ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m@VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m@VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=-1.8V trench technology. This high density process is especially tailored to Sup

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Datasheet: ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , ME200N04T , ME200N04T-G , ME20N10-G , ME20N15F , AON7408 , ME2301A-G , ME2301DC , ME2301DC-G , ME2301DN , ME2301DN-G , ME2301GC , ME2301GC-G , ME2301S .

History: SWB13N65K2 | BL10N80-A

Keywords - ME2301A MOSFET datasheet

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