FDMS7558S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS7558S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
Encapsulados: POWER56
Búsqueda de reemplazo de FDMS7558S MOSFET
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FDMS7558S datasheet
fdms7558s.pdf
December 2009 FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description The FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 A package technologies have been combined to offer the lowes
fdms7558s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7556s.pdf
September 2010 FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description The FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 A package technologies have been combined to offer the lowest
fdms7580.pdf
December 2009 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m Features General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 A ringing of DC/DC converters using either synchronous or Advanced Pack
Otros transistores... FDMS3672 , STM8362 , FDMS4435BZ , FDMS5352 , FDMS5672 , FDMS6673BZ , FDMS6681Z , FDMS7556S , 2N60 , FDMS7560S , FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S .
History: JMSL1040PGQ | IRFU3806PBF | DG2N65-220 | CM4N65C | 2SK1826
History: JMSL1040PGQ | IRFU3806PBF | DG2N65-220 | CM4N65C | 2SK1826
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