FDMS7558S Todos los transistores

 

FDMS7558S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7558S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Encapsulados: POWER56

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FDMS7558S datasheet

 ..1. Size:334K  fairchild semi
fdms7558s.pdf pdf_icon

FDMS7558S

December 2009 FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description The FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 A package technologies have been combined to offer the lowes

 ..2. Size:427K  onsemi
fdms7558s.pdf pdf_icon

FDMS7558S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:325K  fairchild semi
fdms7556s.pdf pdf_icon

FDMS7558S

September 2010 FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description The FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 A package technologies have been combined to offer the lowest

 8.1. Size:362K  fairchild semi
fdms7580.pdf pdf_icon

FDMS7558S

December 2009 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m Features General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 A ringing of DC/DC converters using either synchronous or Advanced Pack

Otros transistores... FDMS3672 , STM8362 , FDMS4435BZ , FDMS5352 , FDMS5672 , FDMS6673BZ , FDMS6681Z , FDMS7556S , 2N60 , FDMS7560S , FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S .

History: JMSL1040PGQ | IRFU3806PBF | DG2N65-220 | CM4N65C | 2SK1826

 

 

 

 

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