FDMS7558S PDF and Equivalents Search

 

FDMS7558S Specs and Replacement

Type Designator: FDMS7558S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: POWER56

FDMS7558S substitution

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FDMS7558S datasheet

 ..1. Size:334K  fairchild semi
fdms7558s.pdf pdf_icon

FDMS7558S

December 2009 FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description The FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 A package technologies have been combined to offer the lowes... See More ⇒

 ..2. Size:427K  onsemi
fdms7558s.pdf pdf_icon

FDMS7558S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:325K  fairchild semi
fdms7556s.pdf pdf_icon

FDMS7558S

September 2010 FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description The FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 A package technologies have been combined to offer the lowest ... See More ⇒

 8.1. Size:362K  fairchild semi
fdms7580.pdf pdf_icon

FDMS7558S

December 2009 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m Features General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 A ringing of DC/DC converters using either synchronous or Advanced Pack... See More ⇒

Detailed specifications: FDMS3672, STM8362, FDMS4435BZ, FDMS5352, FDMS5672, FDMS6673BZ, FDMS6681Z, FDMS7556S, 2N60, FDMS7560S, FDMS7570S, FDMS7572S, FDMS7578, FDMS7580, FDMS7600AS, STM8360T, FDMS7602S

Keywords - FDMS7558S MOSFET specs

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