FDMS7558S MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDMS7558S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 89 W
   Maximum Drain-Source Voltage |Vds|: 25 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 49 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 85 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.0013 Ohm
   Package: POWER56

FDMS7558S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDMS7558S Datasheet (PDF)

..1. Size:334K fairchild semi
fdms7558s.pdf

December 2009FDMS7558SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General DescriptionThe FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 Apackage technologies have been combined to offer the lowes

..2. Size:427K onsemi
fdms7558s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:325K fairchild semi
fdms7556s.pdf

September 2010FDMS7556SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General DescriptionThe FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 Apackage technologies have been combined to offer the lowest

8.1. Size:362K fairchild semi
fdms7580.pdf

December 2009FDMS7580N-Channel Power Trench MOSFET 25 V, 7.5 mFeatures General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 Aringing of DC/DC converters using either synchronous or Advanced Pack

8.2. Size:253K fairchild semi
fdms7560s.pdf

December 2009FDMS7560SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General DescriptionThe FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 26 Apackage technologies have been combined to offer the lowest

8.3. Size:349K fairchild semi
fdms7572s.pdf

January 2010FDMS7572SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General DescriptionThe FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowest

8.4. Size:361K fairchild semi
fdms7578.pdf

December 2009FDMS7578N-Channel Power Trench MOSFET 25 V, 5.8 mFeatures General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Package

8.5. Size:341K fairchild semi
fdms7570s.pdf

December 2009FDMS7570SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General DescriptionThe FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 Apackage technologies have been combined to offer the lowes

8.6. Size:535K onsemi
fdms7572s.pdf