ME2308DN-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME2308DN-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 159 nS

Cossⓘ - Capacitancia de salida: 1.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: DFN1006-3

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ME2308DN-G datasheet

 ..1. Size:830K  matsuki electric
 me2308dn-g.pdf pdf_icon

ME2308DN-G

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8V mini

 7.1. Size:921K  matsuki electric
 me2308d me2308d-g.pdf pdf_icon

ME2308DN-G

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON) 60m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 70m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 100m @VGS=2.5V minimize

 8.1. Size:1540K  matsuki electric
 me2308s me2308s-g.pdf pdf_icon

ME2308DN-G

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

 8.2. Size:850K  cn vbsemi
 me2308s.pdf pdf_icon

ME2308DN-G

ME2308S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

MOSTRAR MÁS

Otros transistores... ME2306DS-G, ME2306-G, ME2306N, ME2306N-G, ME2306S, ME2306S-G, ME2308D, ME2308D-G, 4N60, ME2312, ME2312-G, ME2313, ME2313-G, ME2320D2-G, ME2320DS, ME2320DS-G, ME2324D