ME2308DN-G Specs and Replacement

Type Designator: ME2308DN-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 159 nS

Cossⓘ - Output Capacitance: 1.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: DFN1006-3

ME2308DN-G substitution

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ME2308DN-G datasheet

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ME2308DN-G

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8V mini... See More ⇒

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 me2308d me2308d-g.pdf pdf_icon

ME2308DN-G

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON) 60m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 70m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 100m @VGS=2.5V minimize... See More ⇒

 8.1. Size:1540K  matsuki electric
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ME2308DN-G

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS... See More ⇒

 8.2. Size:850K  cn vbsemi
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ME2308DN-G

ME2308S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒

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Detailed specifications: ME2306DS-G, ME2306-G, ME2306N, ME2306N-G, ME2306S, ME2306S-G, ME2308D, ME2308D-G, 4N60, ME2312, ME2312-G, ME2313, ME2313-G, ME2320D2-G, ME2320DS, ME2320DS-G, ME2324D

Keywords - ME2308DN-G MOSFET specs

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