FDMS7570S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS7570S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 49 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: POWER56

Búsqueda de reemplazo de MOSFET FDMS7570S

FDMS7570S Datasheet (PDF)

..1. Size:341K fairchild semi
fdms7570s.pdf

December 2009FDMS7570SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General DescriptionThe FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 Apackage technologies have been combined to offer the lowes

..2. Size:431K onsemi
fdms7570s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:349K fairchild semi
fdms7572s.pdf

January 2010FDMS7572SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General DescriptionThe FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowest

7.2. Size:361K fairchild semi
fdms7578.pdf

December 2009FDMS7578N-Channel Power Trench MOSFET 25 V, 5.8 mFeatures General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Package

7.3. Size:535K onsemi
fdms7572s.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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