FDMS7570S PDF and Equivalents Search

 

FDMS7570S Specs and Replacement

Type Designator: FDMS7570S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: POWER56

FDMS7570S substitution

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FDMS7570S datasheet

 ..1. Size:341K  fairchild semi
fdms7570s.pdf pdf_icon

FDMS7570S

December 2009 FDMS7570S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description The FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 A package technologies have been combined to offer the lowes... See More ⇒

 ..2. Size:431K  onsemi
fdms7570s.pdf pdf_icon

FDMS7570S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:349K  fairchild semi
fdms7572s.pdf pdf_icon

FDMS7570S

January 2010 FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description The FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowest ... See More ⇒

 7.2. Size:361K  fairchild semi
fdms7578.pdf pdf_icon

FDMS7570S

December 2009 FDMS7578 N-Channel Power Trench MOSFET 25 V, 5.8 m Features General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Package... See More ⇒

Detailed specifications: FDMS4435BZ, FDMS5352, FDMS5672, FDMS6673BZ, FDMS6681Z, FDMS7556S, FDMS7558S, FDMS7560S, P60NF06, FDMS7572S, FDMS7578, FDMS7580, FDMS7600AS, STM8360T, FDMS7602S, STM8358S, FDMS7606

Keywords - FDMS7570S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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