FDMS7572S Todos los transistores

 

FDMS7572S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7572S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm

Encapsulados: POWER56

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FDMS7572S datasheet

 ..1. Size:349K  fairchild semi
fdms7572s.pdf pdf_icon

FDMS7572S

January 2010 FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description The FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowest

 ..2. Size:535K  onsemi
fdms7572s.pdf pdf_icon

FDMS7572S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:361K  fairchild semi
fdms7578.pdf pdf_icon

FDMS7572S

December 2009 FDMS7578 N-Channel Power Trench MOSFET 25 V, 5.8 m Features General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Package

 7.2. Size:341K  fairchild semi
fdms7570s.pdf pdf_icon

FDMS7572S

December 2009 FDMS7570S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description The FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 A package technologies have been combined to offer the lowes

Otros transistores... FDMS5352 , FDMS5672 , FDMS6673BZ , FDMS6681Z , FDMS7556S , FDMS7558S , FDMS7560S , FDMS7570S , 75N75 , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S , STM8358S , FDMS7606 , STM8330 .

History: TMD5N50G | 2SK3264-01MR | KHB5D0N50F2 | 2SK1151L

 

 

 

 

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