FDMS7572S. Аналоги и основные параметры
Наименование производителя: FDMS7572S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 46 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 49 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS7572S
- подборⓘ MOSFET транзистора по параметрам
FDMS7572S даташит
fdms7572s.pdf
January 2010 FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description The FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowest
fdms7572s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms7578.pdf
December 2009 FDMS7578 N-Channel Power Trench MOSFET 25 V, 5.8 m Features General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Package
fdms7570s.pdf
December 2009 FDMS7570S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description The FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 A package technologies have been combined to offer the lowes
Другие MOSFET... FDMS5352 , FDMS5672 , FDMS6673BZ , FDMS6681Z , FDMS7556S , FDMS7558S , FDMS7560S , FDMS7570S , 75N75 , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S , STM8358S , FDMS7606 , STM8330 .
History: IRLL014NTR
History: IRLL014NTR
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