ME3205F-G Todos los transistores

 

ME3205F-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME3205F-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 74 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 263 nS
   Cossⓘ - Capacitancia de salida: 366 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

ME3205F-G Datasheet (PDF)

 ..1. Size:1092K  matsuki electric
 me3205f me3205f-g.pdf pdf_icon

ME3205F-G

ME3205F/ME3205F-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME3205F is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro

 8.1. Size:1568K  matsuki electric
 me3205h-g.pdf pdf_icon

ME3205F-G

ME3205H-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10V The ME3205H-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is especia

 8.2. Size:1186K  matsuki electric
 me3205t me3205t-g.pdf pdf_icon

ME3205F-G

ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10VThe ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density proce

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History: LSG65R290HF | FQU1N50TU | SST202 | BLF7G24LS-100 | FHU7N65B | IRF7316QPBF | RQ6E050AT

 

 
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