ME3205F-G Datasheet and Replacement. Cross Reference Search

ME3205F-G Datasheet (PDF)

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ME3205F/ME3205F-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME3205F is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro

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me3205h-g.pdf pdf_icon

ME3205H-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10V The ME3205H-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is especia

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me3205t me3205t-g.pdf pdf_icon

ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10VThe ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density proce

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