ME4947-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME4947-G Datasheet (PDF)

..1. Size:1226K matsuki electric
me4947 me4947-g.pdf pdf_icon

ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field RDS(ON)72m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)94m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

9.1. Size:1542K matsuki electric
me4946 me4946-g.pdf pdf_icon

ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)41m@VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON)52m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

9.2. Size:955K cn vbsemi
me4946.pdf pdf_icon

ME4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

Otros transistores... ME4856 , ME4856-G , ME4894 , ME4894-G , ME4906-G , ME4920 , ME4920-G , ME4947 , AON6414A , ME4970A , ME4970A-G , ME4972-G , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 .