All MOSFET. ME4947-G Datasheet

 

ME4947-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4947-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOP8

 ME4947-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4947-G Datasheet (PDF)

 ..1. Size:1226K  matsuki electric
 me4947 me4947-g.pdf

ME4947-G ME4947-G

ME4947/ME4947-G P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4947 is the P-Channel logic enhancement mode power field RDS(ON)72m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)94m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 9.1. Size:1542K  matsuki electric
 me4946 me4946-g.pdf

ME4947-G ME4947-G

ME4946/ME4946-G Dual N-Channel 60-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)41m@VGS=10V The ME4946 is the Dual N-Channel logic enhancement mode power RDS(ON)52m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

 9.2. Size:955K  cn vbsemi
 me4946.pdf

ME4947-G ME4947-G

ME4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

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History: ME4425

 

 
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