ME4970A-G Todos los transistores

 

ME4970A-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME4970A-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16.4 nS
   Cossⓘ - Capacitancia de salida: 272 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SOP8
 

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ME4970A-G Datasheet (PDF)

 ..1. Size:1148K  matsuki electric
 me4970a me4970a-g.pdf pdf_icon

ME4970A-G

ME4970A /ME4970A-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970A-G is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=10V power field effect transistors are produced using high cell density, RDS(ON)20m@VGS=4.5V DMOS trench technology. This high density process is especially Super high density cell design for extremely low RD

 8.1. Size:1028K  1
 me4970 me4970g.pdf pdf_icon

ME4970A-G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

 8.2. Size:1213K  matsuki electric
 me4970 me4970-g.pdf pdf_icon

ME4970A-G

ME4970/ME4970-G Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4970 is the Dual N-Channel logic enhancement mode power RDS(ON)16m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)20m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

 8.3. Size:939K  cn vbsemi
 me4970.pdf pdf_icon

ME4970A-G

ME4970www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

MOSTRAR MÁS

Otros transistores... ME4894 , ME4894-G , ME4906-G , ME4920 , ME4920-G , ME4947 , ME4947-G , ME4970A , IRFB4227 , ME4972-G , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 , ME55N06-G , ME5602D-G .

History: IXFV18N60PS | BSC072N04LD | SM3106NSU | AM6411P | IRF7484Q | SVGP069R5NSA | IXTY1N80

 

 
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