FDMS7602S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS7602S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: POWER56
Búsqueda de reemplazo de FDMS7602S MOSFET
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FDMS7602S datasheet
fdms7602s.pdf
August 2010 FDMS7602S Dual N-Channel PowerTrench MOSFET Q1 30 V, 30 A, 7.5 m Q2 30 V, 30 A, 5.0 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(on
fdms7608s.pdf
June 2011 FDMS7608S Dual N-Channel PowerTrench MOSFET Q1 30 V, 22 A, 10.0 m Q2 30 V, 30 A, 6.3 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(
fdms7600as.pdf
December 2009 FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel 30 V, 30 A, 7.5 m N-Channel 30 V, 40 A, 2.8 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synch
fdms7606.pdf
May 2011 FDMS7606 Dual N-Channel PowerTrench MOSFET Q1 30 V, 12 A, 11.4 m Q2 30 V, 22 A, 11.6 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 A connected to enable easy placement and routing of synchronous Max rDS(
Otros transistores... FDMS7558S , FDMS7560S , FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , 7N60 , STM8358S , FDMS7606 , STM8330 , FDMS7608S , STM8324 , FDMS7620S , STM8320 , FDMS7650 .
History: RCX510N25
History: RCX510N25
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