FDMS7602S MOSFET Datasheet: N-Ch, 30V, 30A. Full specification with pinout and replacement list

FDMS7602S Specs and Replacement

Type Designator: FDMS7602S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: POWER56

FDMS7602S substitution

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FDMS7602S datasheet

..1. Size:400K fairchild semi
fdms7602s.pdf pdf_icon

August 2010 FDMS7602S Dual N-Channel PowerTrench MOSFET Q1 30 V, 30 A, 7.5 m Q2 30 V, 30 A, 5.0 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(on... See More ⇒

7.1. Size:399K fairchild semi
fdms7608s.pdf pdf_icon

June 2011 FDMS7608S Dual N-Channel PowerTrench MOSFET Q1 30 V, 22 A, 10.0 m Q2 30 V, 30 A, 6.3 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(... See More ⇒

7.2. Size:464K fairchild semi
fdms7600as.pdf pdf_icon

December 2009 FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel 30 V, 30 A, 7.5 m N-Channel 30 V, 40 A, 2.8 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synch... See More ⇒

7.3. Size:392K fairchild semi
fdms7606.pdf pdf_icon

May 2011 FDMS7606 Dual N-Channel PowerTrench MOSFET Q1 30 V, 12 A, 11.4 m Q2 30 V, 22 A, 11.6 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 A connected to enable easy placement and routing of synchronous Max rDS(... See More ⇒

Detailed specifications: FDMS7558S, FDMS7560S, FDMS7570S, FDMS7572S, FDMS7578, FDMS7580, FDMS7600AS, STM8360T, 7N60, STM8358S, FDMS7606, STM8330, FDMS7608S, STM8324, FDMS7620S, STM8320, FDMS7650