ME60N03S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME60N03S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO252

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ME60N03S datasheet

 ..1. Size:1465K  matsuki electric
 me60n03s me60n03s-g.pdf pdf_icon

ME60N03S

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe

 7.1. Size:649K  matsuki electric
 me60n03a.pdf pdf_icon

ME60N03S

ME60N03A 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute

 7.2. Size:677K  matsuki electric
 me60n03.pdf pdf_icon

ME60N03S

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M

 7.3. Size:1102K  matsuki electric
 me60n03 me60n03-g.pdf pdf_icon

ME60N03S

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g GENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON) 8.5m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 13m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre

MOSTRAR MÁS

Otros transistores... ME4972-G, ME50N02, ME50N02-G, ME50N10, ME50N10-G, ME55N06, ME55N06-G, ME5602D-G, IRF9540, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, ME6606D-G, ME6612D-G, ME6874, ME6874-G