All MOSFET. ME60N03S Datasheet

 

ME60N03S Datasheet and Replacement


   Type Designator: ME60N03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
 

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ME60N03S Datasheet (PDF)

 ..1. Size:1465K  matsuki electric
 me60n03s me60n03s-g.pdf pdf_icon

ME60N03S

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFETVDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe

 7.1. Size:649K  matsuki electric
 me60n03a.pdf pdf_icon

ME60N03S

ME60N03A 25V N-Channel Enhancement Mode MOSFETVDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute

 7.2. Size:677K  matsuki electric
 me60n03.pdf pdf_icon

ME60N03S

ME60N03 30V N-Channel Enhancement Mode MOSFETVDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M

 7.3. Size:1102K  matsuki electric
 me60n03 me60n03-g.pdf pdf_icon

ME60N03S

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -gGENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON)8.5m@VGS=10Vfield effect transistors are produced using high cell density DMOS RDS(ON)13m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre

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Datasheet: ME4972-G , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 , ME55N06-G , ME5602D-G , IRF9540 , ME60N03S-G , ME60N04 , ME60N04-G , ME6600D-G , ME6606D-G , ME6612D-G , ME6874 , ME6874-G .

History: IRFH7190

Keywords - ME60N03S MOSFET datasheet

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