FDMS7606 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS7606
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0114 Ohm
Paquete / Cubierta: POWER56
Búsqueda de reemplazo de FDMS7606 MOSFET
FDMS7606 Datasheet (PDF)
fdms7606.pdf

May 2011FDMS7606Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 Aconnected to enable easy placement and routing of synchronous Max rDS(
fdms7608s.pdf

June 2011FDMS7608SDual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Q2: 30 V, 30 A, 6.3 m Features General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(
fdms7600as.pdf

December 2009FDMS7600ASDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synch
fdms7602s.pdf

August 2010FDMS7602SDual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m Q2: 30 V, 30 A, 5.0 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(on
Otros transistores... FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S , STM8358S , STP65NF06 , STM8330 , FDMS7608S , STM8324 , FDMS7620S , STM8320 , FDMS7650 , STM8319 , FDMS7650DC .
History: PHT8N06LT | APT50M85JVFR | FQP4N90C | FQP4N80
History: PHT8N06LT | APT50M85JVFR | FQP4N90C | FQP4N80



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