All MOSFET. FDMS7606 Datasheet

 

FDMS7606 Datasheet and Replacement


   Type Designator: FDMS7606
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0114 Ohm
   Package: POWER56
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FDMS7606 Datasheet (PDF)

 ..1. Size:392K  fairchild semi
fdms7606.pdf pdf_icon

FDMS7606

May 2011FDMS7606Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 Aconnected to enable easy placement and routing of synchronous Max rDS(

 7.1. Size:399K  fairchild semi
fdms7608s.pdf pdf_icon

FDMS7606

June 2011FDMS7608SDual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Q2: 30 V, 30 A, 6.3 m Features General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(

 7.2. Size:464K  fairchild semi
fdms7600as.pdf pdf_icon

FDMS7606

December 2009FDMS7600ASDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synch

 7.3. Size:400K  fairchild semi
fdms7602s.pdf pdf_icon

FDMS7606

August 2010FDMS7602SDual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m Q2: 30 V, 30 A, 5.0 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(on

Datasheet: FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S , STM8358S , 2SK3918 , STM8330 , FDMS7608S , STM8324 , FDMS7620S , STM8320 , FDMS7650 , STM8319 , FDMS7650DC .

History: FQB12P20TM | LKK47-06C5 | TSM4424CS | PJE8400 | CJAA3139K | IRFB3004GPBF | BRCS200P03DP

Keywords - FDMS7606 MOSFET datasheet

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