ME7632S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7632S-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 113 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58.3 nS
Cossⓘ - Capacitancia de salida: 583 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00185 Ohm
Paquete / Cubierta: DFN3.3X3.3
Búsqueda de reemplazo de ME7632S-G MOSFET
ME7632S-G Datasheet (PDF)
me7632s me7632s-g.pdf

ME7632S/ME7632S-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7632S is the N-Channel logic enhancement mode power RDS(ON) 1.85 m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 3.6 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre
me7632 me7632-g.pdf

Preliminary-ME7632/ME7632-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7632 is the N-Channel logic enhancement mode power field RDS(ON) 1.85 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 3.6 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f
me7636 me7636-g.pdf

ME7636/ME7636-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)2.5m@VGS=10V The ME7636 is the N-Channel logic enhancement mode power field RDS(ON)3.3m@VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is esp
Otros transistores... ME75N03-G , ME7607 , ME7607-G , ME7620 , ME7620-G , ME7632 , ME7632-G , ME7632S , P0903BDG , ME7636 , ME7636-G , ME7640 , ME7640-G , ME7642 , ME7642-G , ME7644 , ME7644-G .



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