ME7632S-G Datasheet and Replacement. Cross Reference Search

ME7632S-G Datasheet (PDF)

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ME7632S/ME7632S-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7632S is the N-Channel logic enhancement mode power RDS(ON) 1.85 m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 3.6 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre

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Preliminary-ME7632/ME7632-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7632 is the N-Channel logic enhancement mode power field RDS(ON) 1.85 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 3.6 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f

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ME7636/ME7636-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)2.5m@VGS=10V The ME7636 is the N-Channel logic enhancement mode power field RDS(ON)3.3m@VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is esp

Datasheet: ME75N03-G , ME7607 , ME7607-G , ME7620 , ME7620-G , ME7632 , ME7632-G , ME7632S , RFP50N06 , ME7636 , ME7636-G , ME7640 , ME7640-G , ME7642 , ME7642-G , ME7644 , ME7644-G .