ME7648S-G Todos los transistores

 

ME7648S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME7648S-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 94 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 424 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: DFN3.3X3.3
 

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ME7648S-G Datasheet (PDF)

 ..1. Size:870K  matsuki electric
 me7648s me7648s-g.pdf pdf_icon

ME7648S-G

ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extrem

 8.1. Size:1657K  matsuki electric
 me7648 me7648-g.pdf pdf_icon

ME7648S-G

Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f

 9.1. Size:2202K  matsuki electric
 me7644 me7644-g.pdf pdf_icon

ME7648S-G

ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON)0.96m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)1.98m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremel

 9.2. Size:1008K  matsuki electric
 me7642 me7642-g.pdf pdf_icon

ME7648S-G

ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

MOSTRAR MÁS

Otros transistores... ME7640-G , ME7642 , ME7642-G , ME7644 , ME7644-G , ME7648 , ME7648-G , ME7648S , AON6380 , ME7686 , ME7686-G , ME7705 , ME7705-G , ME7707 , ME7707-G , ME7732-G , ME7802S-G .

History: HSU6004 | IXFT86N30T | AOB095A60L | IRFS723 | ME70N03S-G | DH400P06F | IPB180N08S4-02

 

 
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