All MOSFET. ME7648S-G Datasheet

 

ME7648S-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME7648S-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72.2 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 424 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: DFN3.3X3.3

 ME7648S-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME7648S-G Datasheet (PDF)

 ..1. Size:870K  matsuki electric
 me7648s me7648s-g.pdf

ME7648S-G ME7648S-G

ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extrem

 8.1. Size:1657K  matsuki electric
 me7648 me7648-g.pdf

ME7648S-G ME7648S-G

Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f

 9.1. Size:2202K  matsuki electric
 me7644 me7644-g.pdf

ME7648S-G ME7648S-G

ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON)0.96m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)1.98m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremel

 9.2. Size:1008K  matsuki electric
 me7642 me7642-g.pdf

ME7648S-G ME7648S-G

ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

 9.3. Size:1062K  matsuki electric
 me7640 me7640-g.pdf

ME7648S-G ME7648S-G

ME7640/ME7640-G N-Channel 40V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7640 is the N-Channel logic enhancement mode power field RDS(ON) 1.35 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 2 m @VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RD

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDV304P

 

 
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