ME7802S-G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME7802S-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME7802S-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 393 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: DFN3.3X3.3

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ME7802S-G datasheet

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ME7802S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 4.6m @VGS=10V The ME7802S-G is the N-Channel logic enhancement mode power RDS(ON) 6.8m @VGS=4.5V field effect transistors are produced using high cell density , DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailo

9.1. Size:1296K 1
me7804s-g.pdf pdf_icon

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 16m @VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m @ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

9.2. Size:890K matsuki electric
me7805s me7805s-g.pdf pdf_icon

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

9.3. Size:959K matsuki electric
me7807s me7807s-g.pdf pdf_icon

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

Otros transistores... ME7648S-G, ME7686, ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G, ME7732-G, IRF1405, ME7805S, ME7805S-G, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G

ME7802S-G Todos los transistores