ME7802S-G Specs and Replacement
Type Designator: ME7802S-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 84 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 393 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: DFN3.3X3.3
ME7802S-G substitution
- MOSFET ⓘ Cross-Reference Search
ME7802S-G datasheet
me7802s-g.pdf
ME7802S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 4.6m @VGS=10V The ME7802S-G is the N-Channel logic enhancement mode power RDS(ON) 6.8m @VGS=4.5V field effect transistors are produced using high cell density , DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailo... See More ⇒
me7804s-g.pdf
ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 16m @VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m @ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are... See More ⇒
me7805s me7805s-g.pdf
ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS... See More ⇒
me7807s me7807s-g.pdf
ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒
Detailed specifications: ME7648S-G, ME7686, ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G, ME7732-G, IRF1405, ME7805S, ME7805S-G, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G
Keywords - ME7802S-G MOSFET specs
ME7802S-G cross reference
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ME7802S-G replacement
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