ME7807S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME7807S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 33.8 nC
   trⓘ - Tiempo de subida: 44.9 nS
   Cossⓘ - Capacitancia de salida: 221 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: DFN3.3X3.3

Búsqueda de reemplazo de MOSFET ME7807S

ME7807S Datasheet (PDF)

..1. Size:959K matsuki electric
me7807s me7807s-g.pdf

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low

9.1. Size:1296K 1
me7804s-g.pdf

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON) 16m@VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m@ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

9.2. Size:890K matsuki electric
me7805s me7805s-g.pdf

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS

9.3. Size:1242K matsuki electric
me7804s-g.pdf

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected DGENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m@VGS=10Veffect transistors are produced using high cell density, DMOS trench RDS(ON) 25m@ VGS=4.5Vtechnology. This high density process is especially tailored to minimize on-state resistance. These devices are pa

9.4. Size:777K matsuki electric
me7802s-g.pdf

ME7802S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4.6m@VGS=10V The ME7802S-G is the N-Channel logic enhancement mode power RDS(ON)6.8m@VGS=4.5V field effect transistors are produced using high cell density , DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailo

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