ME7807S
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME7807S
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 29
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33.8
nC
trⓘ - Rise Time: 44.9
nS
Cossⓘ -
Output Capacitance: 221
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
DFN3.3X3.3
ME7807S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME7807S
Datasheet (PDF)
..1. Size:959K matsuki electric
me7807s me7807s-g.pdf 
ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low
9.1. Size:1296K 1
me7804s-g.pdf
ME7804S-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON) 16m@VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m@ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
9.2. Size:890K matsuki electric
me7805s me7805s-g.pdf
ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS
9.3. Size:1242K matsuki electric
me7804s-g.pdf
ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected DGENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m@VGS=10Veffect transistors are produced using high cell density, DMOS trench RDS(ON) 25m@ VGS=4.5Vtechnology. This high density process is especially tailored to minimize on-state resistance. These devices are pa
9.4. Size:777K matsuki electric
me7802s-g.pdf
ME7802S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4.6m@VGS=10V The ME7802S-G is the N-Channel logic enhancement mode power RDS(ON)6.8m@VGS=4.5V field effect transistors are produced using high cell density , DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailo
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